Title :
Another perspective on the temperature dependence of microelectronic-device reliability
Author :
Cushing, Michael J.
Author_Institution :
US Army Materiel Syst. Anal. Activity, Aberdeen Proving Ground, MD, USA
Abstract :
The Arrhenius model is used in MIL-HDBK-217 to relate microelectronic device temperature to device failure rate without separately considering the relevant failure mechanisms. This application of the model is inconsistent with physics-of-failure (POF) principles as well as acceleration modeling theory. Current POF research indicates that the relationship between temperature and failure rate is more complex than previously realized, necessitating explicit design consideration of temperature change, rate of change, and spatial temperature gradients. A review of acceleration modeling theory indicates that when the effect of temperature on microelectronic device reliability is modeled, each failure mechanism should be treated separately
Keywords :
circuit reliability; failure analysis; integrated circuits; military standards; semiconductor device models; temperature distribution; Arrhenius model; MIL-HDBK-217; acceleration modeling theory; design; failure mechanisms; microelectronic-device reliability; physics-of-failure; spatial temperature gradients; temperature dependence; Acceleration; Electronic equipment; Failure analysis; Life estimation; Maintenance engineering; Microelectronics; Power system reliability; Predictive models; Reliability engineering; Temperature dependence;
Conference_Titel :
Reliability and Maintainability Symposium, 1993. Proceedings., Annual
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-0943-X
DOI :
10.1109/RAMS.1993.296833
