A comparative study of silicon nitride passivation on InP-based double heterojunction bipolar transistors (DHBTs) with different emitter structures

Author

Wang, Hong ; Yang, Hong ; Radhakrishnan, K.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2002

fDate

2002

Firstpage

521

Lastpage

523

Abstract

The impact of emitter layer structure on the electrical characteristics of InP HBTs subjected to SiN passivation was investigated. Negligible degradation of current gain due to SiN passivation has been obtained in the InP HBTs with InAlAs emitter. The experimental results indicate that the base-emitter junction leakage current and its stability depend critically on the emitter structure. The suppression of PECVD SiN induced degradation in InP-based HBTs with InAlAs emitter could be attributed to the high resistance to plasma damage of InAlAs material.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; leakage currents; passivation; silicon compounds; stability; DHBT; InAlAs; InAlAs emitter; InP-based HBTs; PECVD SiN induced degradation suppression; SiN passivation; SiN-InP; base-emitter junction leakage current; current gain; double heterojunction bipolar transistors; electrical characteristics; emitter layer structure; leakage current stability; Degradation; Double heterojunction bipolar transistors; Electric variables; Indium compounds; Indium phosphide; Leakage current; Passivation; Plasma materials processing; Silicon compounds; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014481

Filename

1014481