Title :
A comparative study of silicon nitride passivation on InP-based double heterojunction bipolar transistors (DHBTs) with different emitter structures
Author :
Wang, Hong ; Yang, Hong ; Radhakrishnan, K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
The impact of emitter layer structure on the electrical characteristics of InP HBTs subjected to SiN passivation was investigated. Negligible degradation of current gain due to SiN passivation has been obtained in the InP HBTs with InAlAs emitter. The experimental results indicate that the base-emitter junction leakage current and its stability depend critically on the emitter structure. The suppression of PECVD SiN induced degradation in InP-based HBTs with InAlAs emitter could be attributed to the high resistance to plasma damage of InAlAs material.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; leakage currents; passivation; silicon compounds; stability; DHBT; InAlAs; InAlAs emitter; InP-based HBTs; PECVD SiN induced degradation suppression; SiN passivation; SiN-InP; base-emitter junction leakage current; current gain; double heterojunction bipolar transistors; electrical characteristics; emitter layer structure; leakage current stability; Degradation; Double heterojunction bipolar transistors; Electric variables; Indium compounds; Indium phosphide; Leakage current; Passivation; Plasma materials processing; Silicon compounds; Stability;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014481
