Title :
Spontaneous ordering in InxGa1-xP (x≈0.5) alloys: FIR and Raman spectroscopy studies
Author :
Baidus, N.V. ; Biryukov, A.A. ; Rolo, A.G. ; Vasilevskiy, M.L. ; Vikhrova, O.V. ; Zvonkov, B.N.
Author_Institution :
Physico-Tech. Res. Inst., N.L. Lobachevskii Univ., Nizhni Novgorod, Russia
Abstract :
Phonon modes in MOVPE grown In0.5Ga0.5P containing domains with CuPt-type ordering in the cationic sublattice along the [-111] and [1-11] directions were studied by means of FIR and Raman spectroscopy. The observed polarization dependence of the transmittance of the FIR radiation near 370 cm-1 suggests that this TO-type mode is characteristic not only of the disordered alloy, but also of the ordered InGaP2. Ordering-related features observed by Raman spectroscopy include the extra (354 cm-1) phonon mode appearing (although not clearly resolved) in the allowed z(xy)z [001] scattering, and a clear difference between the spectra taken in z(x´x´)z and z(y´y´)z configurations. All these effects are noticeably smaller for the InGaP films with lower degree of ordering due to doping with Bi during its growth.
Keywords :
III-V semiconductors; MOCVD coatings; Raman spectra; electromagnetic wave polarisation; gallium compounds; indium compounds; infrared spectra; phonon spectra; semiconductor epitaxial layers; Bi doping; CuPt-type ordering; FIR; FIR spectra; InGaP; InGaP alloys; InGaP:Bi; MOVPE; Raman spectroscopy; TO-type mode; degree of ordering; phonon modes; polarization dependence; spontaneous ordering; Epitaxial growth; Epitaxial layers; Finite impulse response filter; Gallium alloys; Optical films; Phonons; Raman scattering; Reflectivity; Spectroscopy; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014482
