Title :
Class-G headphone driver in 65nm CMOS technology
Author :
Lollio, Alex ; Bollati, G. ; Castello, Rinaldo
Author_Institution :
Univ. of Pavia, Pavia, Italy
Abstract :
A 65 nm CMOS Class-G headphone driver operates from ±1.4 V, ±0.35 V supplies. At low power level it uses the low voltage supply to reduce the dissipation to 1.63 mW @ Pout = 0.5 mW into 32 ¿. At higher power level, the smooth transition between the voltage supply rails allows a THD+N better than -80 dB for Pout ¿ 16 mW into 32 ¿. The SNR is 101 dB, quiescent power is 0.41 mW and active die area is 0.14 mm2.
Keywords :
CMOS analogue integrated circuits; amplifiers; driver circuits; CMOS technology; class-G headphone driver; power 1.63 mW; size 65 nm; CMOS technology; Driver circuits; Headphones; Low voltage; MOSFETs; Power generation; Power transistors; Rails; Semiconductor device modeling; Switching circuits;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5434039
