• DocumentCode
    1889813
  • Title

    Class-G headphone driver in 65nm CMOS technology

  • Author

    Lollio, Alex ; Bollati, G. ; Castello, Rinaldo

  • Author_Institution
    Univ. of Pavia, Pavia, Italy
  • fYear
    2010
  • fDate
    7-11 Feb. 2010
  • Firstpage
    84
  • Lastpage
    85
  • Abstract
    A 65 nm CMOS Class-G headphone driver operates from ±1.4 V, ±0.35 V supplies. At low power level it uses the low voltage supply to reduce the dissipation to 1.63 mW @ Pout = 0.5 mW into 32 ¿. At higher power level, the smooth transition between the voltage supply rails allows a THD+N better than -80 dB for Pout ¿ 16 mW into 32 ¿. The SNR is 101 dB, quiescent power is 0.41 mW and active die area is 0.14 mm2.
  • Keywords
    CMOS analogue integrated circuits; amplifiers; driver circuits; CMOS technology; class-G headphone driver; power 1.63 mW; size 65 nm; CMOS technology; Driver circuits; Headphones; Low voltage; MOSFETs; Power generation; Power transistors; Rails; Semiconductor device modeling; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4244-6033-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2010.5434039
  • Filename
    5434039
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1889813