Title :
Structural and optical properties of lateral composition modulation in (GaP)n/(InP)n short-period superlattice
Author :
Song, Jin Dong ; Kim, Jong Min ; Ok, Young-Woo ; Seong, Tae-Yeon ; Lee, Yong Tak
Author_Institution :
Dept. of Inf. & Commun., Kwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
The structural and optical properties of lateral composition modulation (LCM) in (InP)n/(GaP)n short-period superlattice grown by molecular beam epitaxy were studied with transmission electron microscopy (TEM) and photoluminescence (PL) at the growth temperature (Tg) of 425 and 490°C for n = 1, 1.7, and 2. LCM occurs only in a [1-10] direction at Tg = 490°C for n = 1 and 2. On the contrary, LCM occurs both in [1-10] and [110] directions, parallel to [100] direction, at Tg ≥ 425°C for n = 1.7. This is due to the stronger induction of LCM in tensile strain (∼-10% for n = 1.7) than in compressive strain (∼6% for n = 1 and 2). The 9 K-PL measurements show that the LCM experiences the reduction of bandgap up to ∼345 meV as both n and Tg increase. This is the best data ever reported so far. The origin of bandgap shrinkage is mainly attributed to LCM along with the contribution of CuPt-type ordering.
Keywords :
III-V semiconductors; energy gap; gallium compounds; indium compounds; internal stresses; photoluminescence; semiconductor superlattices; transmission electron microscopy; (GaP)n/(InP)n short-period superlattice; 425 degC; 490 degC; 9 K; CuPt-type ordering; GaP-InP; LCM; PL; TEM; bandgap shrinkage; compressive strain; growth temperature; lateral composition modulation; molecular beam epitaxy; optical properties; photoluminescence; structure; tensile strain; transmission electron microscopy; Electron beams; Electron optics; Molecular beam epitaxial growth; Optical microscopy; Optical modulation; Optical superlattices; Photoluminescence; Photonic band gap; Tensile strain; Transmission electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014487