Title :
A thermal-diffusivity-based frequency reference in standard CMOS with an absolute inaccuracy of ±0.1% from −55°C to 125°C
Author :
Kashmiri, M. ; Pertijs, Michiel ; Makinwa, Kofi
Author_Institution :
Delft Univ. of Technol., Delft, Netherlands
Abstract :
An on-chip frequency reference exploiting the well-defined thermal diffusivity of IC-grade silicon has been realized in a standard 0.7 ¿m CMOS process. It has an output frequency of 1.6 MHz, and achieves an absolute inaccuracy (device-to-device spread) of ±0.1% from -55°C to 125°C, and a temperature coefficient of ±11.2 ppm/°C, while dissipating 7.8 mW from a 5 V supply.
Keywords :
CMOS integrated circuits; mixed analogue-digital integrated circuits; modulators; reference circuits; signal processing; thermal diffusion; frequency 1.6 MHz; on chip frequency reference; power 7.8 mW; size 0.7 mum; standard CMOS process; temperature -55 C to 125 C; thermal diffusivity based frequency reference; voltage 5 V; Capacitors; Counting circuits; Delta modulation; Electrothermal effects; Frequency locked loops; Oscillators; Photonic band gap; Sampling methods; Temperature sensors; Voltage;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5434042
