Title :
Investigation of threshold-voltage models for thin-film SOI MOSFETs
Author :
Schubert, M. ; Höfflinger, B. ; Zingg, R.P.
Author_Institution :
Inst. for Microelectron., Stuttgart, Germany
Abstract :
Various threshold-voltage models presented in the literature are compared to measured data on a lightly doped dual-gate controlled p-channel SOI (silicon-on-insulator) MOSFET. A threshold-voltage model Vth.1(Vg.2) based on a constant Si-surface potential was found to be unsatisfactory for lightly doped thin-film SOI MOSFETs due to both a varying effective mobility and a significantly varying mobile charge
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; surface potential; thin film transistors; constant Si-surface potential; effective mobility; lightly doped dual gate controlled p-channel transistor; mobile charge; thin-film SOI MOSFETs; threshold-voltage models; Analytical models; Conferences; Data mining; Doping; Electron mobility; Lighting control; MOSFETs; Microelectronics; Threshold voltage; Transistors;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162845
