• DocumentCode
    1889964
  • Title

    Investigation of threshold-voltage models for thin-film SOI MOSFETs

  • Author

    Schubert, M. ; Höfflinger, B. ; Zingg, R.P.

  • Author_Institution
    Inst. for Microelectron., Stuttgart, Germany
  • fYear
    1991
  • fDate
    1-3 Oct 1991
  • Firstpage
    38
  • Lastpage
    39
  • Abstract
    Various threshold-voltage models presented in the literature are compared to measured data on a lightly doped dual-gate controlled p-channel SOI (silicon-on-insulator) MOSFET. A threshold-voltage model Vth.1(Vg.2) based on a constant Si-surface potential was found to be unsatisfactory for lightly doped thin-film SOI MOSFETs due to both a varying effective mobility and a significantly varying mobile charge
  • Keywords
    insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; surface potential; thin film transistors; constant Si-surface potential; effective mobility; lightly doped dual gate controlled p-channel transistor; mobile charge; thin-film SOI MOSFETs; threshold-voltage models; Analytical models; Conferences; Data mining; Doping; Electron mobility; Lighting control; MOSFETs; Microelectronics; Threshold voltage; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1991. Proceedings, 1991., IEEE International
  • Conference_Location
    Vail Valley, CO
  • Print_ISBN
    0-7803-0184-6
  • Type

    conf

  • DOI
    10.1109/SOI.1991.162845
  • Filename
    162845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1889964