Title :
Fabrication of 3D a-Si/SiO2-photonic crystals on 2D sub-micron-patterned InP substrates
Author :
Segawa, Tetsuro ; Utaka, Katsuyuki ; Naganuma, M. ; Sato, Hisashi ; Kawakami, Shojiro ; Izutsu, Masayulu ; Nakao, Masashi
Author_Institution :
Waseda Univ., Tokyo, Japan
Abstract :
We have fabricated three-dimensional (3D) periodic structures consisting of stacked a-Si/SiO2 layers directly on two-dimensional (2D) sub-micron-patterned [100]-InP substrates by using autocloning technology. The initial 2D pattern has been reflected in the 3D periodic structures whose height has been amplified. We have measured the transmission and reflection spectra of the 3D periodic structures, and have observed the photonic band gaps in the wavelength region of around 1400 to 2200 nm. We have also observed strong polarization dependency for the samples with the triangular lattice and weak dependency for those of the square case.
Keywords :
III-V semiconductors; amorphous semiconductors; elemental semiconductors; periodic structures; photonic band gap; quantum well devices; semiconductor quantum wells; silicon; silicon compounds; 1400 to 2200 nm; 2D sub-micron-patterned substrates; 3D periodic structures; Si-SiO2-InP; a-Si/SiO2-photonic crystals; autocloning technology; multiple quantum well structures; photonic band gaps; photonic devices; polarization dependency; reflection spectra; transmission spectra; triangular lattice; Holography; Indium phosphide; Lattices; Milling; Optical device fabrication; Periodic structures; Photonic crystals; Resists; Scanning electron microscopy; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014490
