Title :
Optical investigations on InP and GaInP quantum dots
Author :
Jetter, Michael ; Beirne, G. ; Rossi, Mark ; Porsche, Jörg ; Scholz, Ferdinand ; Schweizer, Heinz
Author_Institution :
4 Phys. Inst., Stuttgart Univ., Germany
Abstract :
We present power and temperature dependent photoluminescence measurements of InP and GaInP self assembled quantum dots. In order to investigate the recombination mechanisms in these dots, time resolved measurements were performed. To examine the properties of a single quantum dot we have structured the samples with mesas of different sizes, to reduce the amount of optically active dots. The PL results of these experiments are also reported here.
Keywords :
III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; time resolved spectroscopy; GaInP; InP; mesas; optically active dots; photoluminescence measurements; recombination mechanisms; self assembled quantum dots; time resolved measurements; Gain measurement; Indium phosphide; Performance evaluation; Photoluminescence; Power measurement; Quantum dots; Radiative recombination; Temperature dependence; Temperature measurement; Time measurement;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014492
