DocumentCode
1890109
Title
Optical investigations on InP and GaInP quantum dots
Author
Jetter, Michael ; Beirne, G. ; Rossi, Mark ; Porsche, Jörg ; Scholz, Ferdinand ; Schweizer, Heinz
Author_Institution
4 Phys. Inst., Stuttgart Univ., Germany
fYear
2002
fDate
2002
Firstpage
569
Lastpage
572
Abstract
We present power and temperature dependent photoluminescence measurements of InP and GaInP self assembled quantum dots. In order to investigate the recombination mechanisms in these dots, time resolved measurements were performed. To examine the properties of a single quantum dot we have structured the samples with mesas of different sizes, to reduce the amount of optically active dots. The PL results of these experiments are also reported here.
Keywords
III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; time resolved spectroscopy; GaInP; InP; mesas; optically active dots; photoluminescence measurements; recombination mechanisms; self assembled quantum dots; time resolved measurements; Gain measurement; Indium phosphide; Performance evaluation; Photoluminescence; Power measurement; Quantum dots; Radiative recombination; Temperature dependence; Temperature measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN
1092-8669
Print_ISBN
0-7803-7320-0
Type
conf
DOI
10.1109/ICIPRM.2002.1014492
Filename
1014492
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