Title :
Bandwidth modeling and optimization of PIN photodiodes
Author :
Fernandes, C. M Caramona ; Pereira, J. M Torres
Author_Institution :
Dept. of Electr. & Comput. Eng., Inst. Super. Tecnico, Lisbon, Portugal
Abstract :
This paper presents a very general and complete numerical model which is used in the calculation and optimization of the bandwidth of PIN photodiodes. The model takes into account not only the transit time effects but also the capacitive effects. These combined effects are seen to limit the bandwidth to a maximum value which decreases when the area and the series resistance of the device increase. The capacitive effects determine the bandwidth of short devices which seems to be independent of bias voltage and the direction of incident light.
Keywords :
optimisation; p-i-n photodiodes; PIN photodiodes; bandwidth modeling; bias voltage; incident light direction; optimization; series resistance; Absorption; Bandwidth; Electric fields; Frequency response; PIN photodiodes; Resistance; PIN photodiode; bandwidth; capacitive effects; frequency response; modeling; photodiode;
Conference_Titel :
EUROCON - International Conference on Computer as a Tool (EUROCON), 2011 IEEE
Conference_Location :
Lisbon
Print_ISBN :
978-1-4244-7486-8
DOI :
10.1109/EUROCON.2011.5929220
