DocumentCode :
1890227
Title :
Current modulation in fine electrode by hot electron passing through GaInAs/InP double slits
Author :
Miyamoto, Y. ; Nakamura, H. ; Ninomiya, Y. ; Oguchi, H. ; Machida, N. ; Furuya, K.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fYear :
2002
fDate :
2002
Firstpage :
585
Lastpage :
588
Abstract :
We attempted to observe the interference pattern of a hot electron passing through a 25 nm pitch GaInAs/InP buried double slit by 80 nm periodical electrodes. To get sufficient isolation of the fine electrodes from one another, we inserted a small conduction band discontinuity and etched surfaces between the electrodes. We made five period fine electrodes. Unfortunately, three electrodes did not show the current and the observed current from one electrode was too large. However, the one remaining electrode showed the modulation of the current in magnetic field. The result was compared with the theoretical hot electron interference pattern.
Keywords :
III-V semiconductors; buried layers; gallium arsenide; hot carriers; indium compounds; quantum interference devices; quantum interference phenomena; semiconductor heterojunctions; 25 nm; 80 nm; GaInAs-InP; GaInAs/InP buried double slit; conduction band discontinuity; etched surfaces; fine electrodes; hot electron interference pattern; lateral electron wave coherency; magnetic field current modulation; Conductivity; Contact resistance; Electrodes; Electrons; Etching; Fluctuations; Indium phosphide; Interference; Ohmic contacts; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014496
Filename :
1014496
Link To Document :
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