Title :
A new nondestructive dual beam optical modulation (DBOM) technique for minority carrier lifetime measurements in SOI materials
Author :
Yang, P.C. ; Brady, F.T. ; Li, Sheng S.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A novel measurement technique is developed for the nondestructive characterization of the minority carrier lifetime in SIMOX (separation by implanted oxygen) substrates, based on the dual-beam optical modulation (DBOM) technique. This method is based on the change of the transmission intensity of infrared light through a SOI (silicon-on-insulator) wafer due to absorption by free carriers in silicon. The excess carriers are generated by a pump beam while the change in the transmission intensity of the infrared probe beam is monitored
Keywords :
carrier lifetime; light transmission; minority carriers; optical modulation; semiconductor-insulator boundaries; DBOM; IR light transmission intensity; SIMOX substrates; SOI materials; Si-SiO2; dual beam optical modulation; free carrier absorption; minority carrier lifetime; nondestructive characterization; Charge carrier lifetime; Electromagnetic wave absorption; Infrared surveillance; Laser excitation; Measurement techniques; Monitoring; Optical beams; Optical modulation; Probes; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162846
