A new nondestructive dual beam optical modulation (DBOM) technique for minority carrier lifetime measurements in SOI materials

Author

Yang, P.C. ; Brady, F.T. ; Li, Sheng S.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

40

Lastpage

41

Abstract

A novel measurement technique is developed for the nondestructive characterization of the minority carrier lifetime in SIMOX (separation by implanted oxygen) substrates, based on the dual-beam optical modulation (DBOM) technique. This method is based on the change of the transmission intensity of infrared light through a SOI (silicon-on-insulator) wafer due to absorption by free carriers in silicon. The excess carriers are generated by a pump beam while the change in the transmission intensity of the infrared probe beam is monitored

Keywords

carrier lifetime; light transmission; minority carriers; optical modulation; semiconductor-insulator boundaries; DBOM; IR light transmission intensity; SIMOX substrates; SOI materials; Si-SiO₂; dual beam optical modulation; free carrier absorption; minority carrier lifetime; nondestructive characterization; Charge carrier lifetime; Electromagnetic wave absorption; Infrared surveillance; Laser excitation; Measurement techniques; Monitoring; Optical beams; Optical modulation; Probes; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162846

Filename

162846