DocumentCode
1890265
Title
RF power detector using a silicon MOSFET
Author
Ratni, M. ; Huyart, B. ; Bergeault, E. ; Jallet, L.
Author_Institution
ENST, Paris, France
Volume
2
fYear
1998
fDate
7-12 June 1998
Firstpage
1139
Abstract
This paper presents a novel approach for RF power measurements using a silicon MOSFET. It describes linear and nonlinear models of the RF MOSFET for results prediction. It shows a thorough comparison between predicted and measured results. The detector demonstrates a better sensitivity than biased Schottky diode detectors that we have measured.
Keywords
MOS analogue integrated circuits; MOSFET; S-parameters; UHF detectors; UHF field effect transistors; UHF integrated circuits; UHF measurement; elemental semiconductors; equivalent circuits; field effect MMIC; power measurement; semiconductor device models; silicon; MMIC power detector; RF MOSFET; RF power detector; RF power measurements; Si; linear models; nonlinear models; sensitivity; silicon MOSFET; Detectors; FETs; MOSFET circuits; Power MOSFET; Power harmonic filters; Power measurement; Radio frequency; Schottky diodes; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.705195
Filename
705195
Link To Document