Title :
42– 68 GHz broad band low noise high gain MMIC amplifier
Author :
Wang, Chuang ; Fusco, Vincent F. ; Sun, Lingling
Author_Institution :
ECIT Inst., Queen´´s Univ. Belfast, Belfast
Abstract :
A V band (42- 68 GHz) MMIC broad band low noise amplifier for 60 GHz high data rate indoor wireless communication system has been designed and tested. The amplifier has been designed in conjunction with other transceiver MMIC in the 0.15 mum GaAs pHEMT process of UMS (PH15). The measurement results matched very well with the simulation ones based on the extensive circuit and EM co-simulations. The compact amplifier, which is only approx. 1.9times1.2 mm2 with 100 pF on- wafer decoupled capacitor, gives out a gain of 22 dB and a noise figure of 3.5 dB with 110 mW DC power consuming. It is well matched in the band 42- 68 GHz.
Keywords :
MMIC amplifiers; gallium compounds; high electron mobility transistors; low noise amplifiers; radiocommunication; GaAs; UMS; broad band amplifier; capacitance 100 pF; frequency 42 GHz to 68 GHz; gain 22 dB; high data rate indoor communication system; high gain MMIC amplifier; low noise amplifier; noise figure 3.5 dB; pHEMT process; power 110 mW; size 0.15 mum; Circuit simulation; Circuit testing; Gallium arsenide; Low-noise amplifiers; MMICs; PHEMTs; Power amplifiers; System testing; Transceivers; Wireless communication; 60GHz; MMIC; broad band; low noise amplifier;
Conference_Titel :
Communication Technology, 2008. ICCT 2008. 11th IEEE International Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4244-2250-0
Electronic_ISBN :
978-1-4244-2251-7
DOI :
10.1109/ICCT.2008.4716233
