DocumentCode :
1890400
Title :
Photoemission study of highly luminescent InP nanocrystals
Author :
Adam, S. ; McGinley, C. ; Moller, Torsten
Author_Institution :
HASYLAB, DESY, Hamburg, Germany
fYear :
2002
fDate :
2002
Firstpage :
601
Lastpage :
604
Abstract :
Two kinds of strongly luminescent materials based on monodisperse colloidal InP nanocrystals were investigated by photoelectron spectroscopy with the use of synchrotron radiation. One method to achieve high photoluminescence quantum yields is the epitaxial overgrowth of a shell of a wider band gap semiconductor on the surface of the InP nanocrystals. We have studied InP nanocrystals covered with ZnS. The XPS results confirmed the core-shell structure of the composite nanocrystals and allowed us to extract the average layer thickness of the ZnS shell. Another approach to prepare highly luminescent nanoparticles is etching the nanocrystal surface with certain fluorine compounds. We have investigated InP nanocrystals treated with hydrogen fluoride. High resolution In 3d and P 2p core level spectra of etched and non-etched particles reveal changes at the nanocrystal surface. A simple model for the etching process is discussed.
Keywords :
II-VI semiconductors; III-V semiconductors; X-ray photoelectron spectra; colloidal crystals; core levels; etching; indium compounds; nanoparticles; photoluminescence; wide band gap semiconductors; zinc compounds; HF treatment; In 3d core level spectra; InP; InP nanocrystal surface; InP-ZnS; P 2p core level spectra; XPS; average layer thickness; composite nanocrystals; core-shell structure; epitaxial overgrowth; high photoluminescence quantum yields; high resolution core level spectra; highly luminescent InP nanocrystals; highly luminescent nanoparticles; monodisperse colloidal InP nanocrystals; nanocrystal surface etching; photoelectron spectroscopy; synchrotron radiation; wide band gap semiconductor shell; Etching; Indium phosphide; Nanocrystals; Photoelectricity; Photoluminescence; Semiconductor materials; Spectroscopy; Surface treatment; Synchrotron radiation; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014500
Filename :
1014500
Link To Document :
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