Title :
Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In0.53Ga0.47As heterojunction bipolar transistor
Author :
Lefebvre, Eric ; Zaknoune, Mohammed ; Mollot, F.
Author_Institution :
Inst. d´Electronique et de Microelectronique du Nord, CNRS, Villeneuve d´Ascq
Abstract :
The optimisation of an abrupt emitter-base n-p junction for an InP/In0.53Ga0.47As heterojunction bipolar transistor has been carried out for heavily Be-doped In0.53Ga0.47As, with Be concentration ranging from 4.4 × 1019 cm-3 to 1.2 × 1020 cm-3. The electrical conductivity continuously increases even for the highest Be concentrations. Beryllium diffusion and segregation are strongly reduced by lowering the MBE growth temperature to 400°C and less. Combined with precise adjustment of the thickness of an undoped spacer layer, it leads to high quality emitter-base junctions. Nearly ideal emitter-base I-V characteristics have been obtained for a doping level around 1 × 1020 cm-3, allowing ultra-high frequency HBTs with a base width as thin as 20 nm.
Keywords :
III-V semiconductors; UHF bipolar transistors; beryllium; electrical conductivity; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; molecular beam epitaxial growth; p-n heterojunctions; 20 nm; 400 degC; Be concentration; Be diffusion; Be segregation; MBE growth temperature reduction; RF performance; abrupt emitter-base n-p junction; electrical conductivity; emitter-base I-V characteristics; heavily Be-doped InGaAs; n-p junction optimisation; ultra-high frequency HBTs; undoped spacer layer thickness adjustment; Conductivity; Doping; Electrons; Heterojunction bipolar transistors; Indium phosphide; Life estimation; Nanostructures; Optical fibers; Radio frequency; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014503
