Title :
Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-μm laser applications
Author :
Asplund, C. ; Sundgren, P. ; Hammar, M.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
Abstract :
The effects of high group-V precursor flows during metal-organic vapor phase epitaxial growth of GaInNAs QWs are investigated. It is shown that photoluminescence line width, wafer uniformity, and sensitivity to growth temperature can be improved using V/III ratios in excess of 2000. Broad area GaInNAs/GaAs SQW lasers with dimensions 100 × 820 μm2 grown under these conditions have threshold current densities as low as 660 kA/cm at 1.26 μm emission wavelength.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; vapour phase epitaxial growth; 1.3 micron; GaInNAs-GaAs; GaInNAs/GaAs quantum well; broad area SQW laser; metal-organic vapor phase epitaxial growth; photoluminescence; threshold current density; Epitaxial growth; Gallium arsenide; Indium; Laser applications; Nitrogen; Photoluminescence; Quantum well lasers; Reproducibility of results; Solids; Temperature sensors;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014504
