Title :
High performance of short-channel MOSFETs due to an elevated central-channel doping
Author :
Tanaka, M. ; Tokida, N. ; Okagaki, T. ; Miura-Mattausch, M. ; Hansch, W. ; Mattausch, H.J.
Author_Institution :
Dept. of Electr. Eng., Hiroshima Univ., Japan
Abstract :
An elevated central-channel doping with a depth similar to the S/D junctions is proposed as the best measure for simultaneously improving MOSFET device and high speed circuit performances as well as minimizing their fluctuations. We base our arguments on hydrodynamic device simulation, measured device data of vertical MOSFETs with a central delta-doped impurity profile and include experimental results on doping-profile fluctuations along the channel, which have not been available previously.
Keywords :
MOSFET; doping profiles; fluctuations; semiconductor device models; delta-doped impurity profile; doping-profile fluctuations; elevated central-channel doping; high performance devices; high speed circuit performance; hydrodynamic device simulation; short-channel MOSFETs; Circuit simulation; Doping profiles; Fluctuations; Hydrodynamics; Impurities; MOSFETs; Molecular beam epitaxial growth; Performance evaluation; Threshold voltage; Velocity measurement;
Conference_Titel :
Design Automation Conference, 2000. Proceedings of the ASP-DAC 2000. Asia and South Pacific
Conference_Location :
Yokohama, Japan
Print_ISBN :
0-7803-5973-9
DOI :
10.1109/ASPDAC.2000.835125
