DocumentCode :
1890547
Title :
Circuit performance oriented device optimization using BSIM3 pre-silicon model parameters
Author :
Miyama, Mikako ; Kamohara, Shiro
Author_Institution :
Semicond. & Integrated Circuits, Hitachi Ltd., Tokyo, Japan
fYear :
2000
fDate :
9-9 June 2000
Firstpage :
371
Lastpage :
374
Abstract :
We propose a circuit performance oriented device optimization methodology using pre-silicon parameters and critical paths which represent the performance of the chip. Based on our methodology, we successfully reduced the power consumption by 90% and, at the same time, increased the frequency by 30% from the initial design. The key to this optimization methodology is the pre-silicon parameter generation method, which can predict the device performance within 5% accuracy in a few minutes.
Keywords :
MOSFET; optimisation; semiconductor device models; BSIM3 pre-silicon model parameters; MOSFETs; circuit performance oriented device optimization; critical paths; frequency improvement; optimization methodology; power consumption reduction; pre-silicon parameter generation method; AC generators; Capacitance; Circuit optimization; DC generators; Energy consumption; Frequency; Integrated circuit interconnections; Integrated circuit modeling; Optimization methods; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference, 2000. Proceedings of the ASP-DAC 2000. Asia and South Pacific
Conference_Location :
Yokohama, Japan
Print_ISBN :
0-7803-5973-9
Type :
conf
DOI :
10.1109/ASPDAC.2000.835126
Filename :
835126
Link To Document :
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