Title :
Agilent HBT model extraction and circuit verification for InGaP/GaAs HBT
Author :
Han, Jian ; Sun, Ling-Ling ; Liu, Jun ; Wen, Jin-Cai
Author_Institution :
Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou
Abstract :
Agilent HBT model parameters are extracted from the multi-finger InGaP/ GaAs HBT fabricated in 2 um process. Comparison has been made between measured and simulated data for verification purpose. With frequency range from DC to 20.05 GHz, this model is suitable for simulating InGaP/ GaAs HBT AC small -signal characterization. Using this model to verify a broadband amplifier, the result shows good agreement between simulated and measured data.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; InGaP-GaAs; agilent HBT model extraction; circuit verification; Broadband amplifiers; Circuit simulation; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Parameter extraction; Parasitic capacitance; Radiofrequency integrated circuits; Scattering parameters; Semiconductor process modeling; Agilent HBT model; InGaP/ GaAs HBT; broadband amplifier;
Conference_Titel :
Communication Technology, 2008. ICCT 2008. 11th IEEE International Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4244-2250-0
Electronic_ISBN :
978-1-4244-2251-7
DOI :
10.1109/ICCT.2008.4716253
