Title :
Radiation effects in fully-depleted CMOS/SOS
Author :
Rios, R. ; Smeltzer, R.K. ; Garcia, G.A.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
Device modeling was used to investigate features of thin-film devices and to explore the consequences of radiation exposure. A simple model for radiation-induced charge accumulation at the silicon-sapphire interface was adopted. The model calculates only the distribution of interface charge, not the actual charge density as a function of radiation dose. Two bias conditions, gate high and drain high, were considered. As an example of the results, normalized trapped charge distributions in the silicon-sapphire interface for the gate-high bias condition are presented; in this case, charge accumulation tends to be along the channel length dimension under the body near the mesa edge. For the drain-high case, charge accumulation is preferentially in the width dimension near the source end of the device. From these distributions the dependence of subthreshold characteristics on peak interface charge has been calculated to illustrate the strong sensitivity of the fully-depleted device to charge accumulation
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; interface electron states; radiation effects; semiconductor device models; semiconductor-insulator boundaries; Si-Al2O3 interface; device modelling; drain high bias; fully-depleted CMOS/SOS; gate-high bias condition; interface charge distribution; radiation exposure; radiation-induced charge accumulation; subthreshold characteristics; thin-film devices; CMOS technology; Charge carrier processes; Marine technology; Oceans; Radiation effects; Silicon on insulator technology; Smelting; Substrates; Thin film devices; Thin film transistors;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162848