Temperature effects modeling in silicon piezoresistive pressure sensor

Author

Aljancic, U. ; Resnik, D. ; Vrtacnik, D. ; Mozek, M. ; Amon, S.

Author_Institution

Lab. of Microsensor Structures, Ljubljana Univ., Slovenia

fYear

2002

fDate

2002

Firstpage

36

Lastpage

40

Abstract

Temperature effects and compensation for temperature drift of offset voltage in silicon piezoresistive pressure sensors were analyzed. The derived equations take into account temperature dependences, the piezoresistive effect and thermal expansion of the diaphragm inducing additional stresses. Measurements performed on fabricated sensors confirm the importance of diaphragm induced thermal stress. Accordingly, a computer program enabling fast calculation of sensor sensitivity and offset voltage was conceived. Based on the analysis, an approach to compensation for temperature drift of offset voltage is proposed and confirmed with experimental results.

Keywords

compensation; diaphragms; elemental semiconductors; piezoresistive devices; pressure sensors; semiconductor device measurement; semiconductor device models; silicon; stress analysis; thermal expansion; thermal stresses; Si; computer program; diaphragm induced thermal stress; offset voltage; offset voltage temperature drift compensation; piezoresistive effect; sensor measurements; sensor sensitivity; silicon piezoresistive pressure sensor; temperature dependences; temperature effects modeling; thermal expansion; Equations; Performance evaluation; Piezoresistance; Silicon; Stress measurement; Temperature dependence; Temperature sensors; Thermal expansion; Thermal stresses; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 2002. MELECON 2002. 11th Mediterranean

Print_ISBN

0-7803-7527-0

Type

conf

DOI

10.1109/MELECON.2002.1014525

Filename

1014525