DocumentCode :
1890839
Title :
Spice compatible electrothermal model of a built-in VDMOSFET diode
Author :
Sunde, Viktor ; Butkovic, Zeljko ; Bencic, Z.
Author_Institution :
Fac. of Electr. Eng. & Comput., Zagreb Univ., Croatia
fYear :
2002
fDate :
2002
Firstpage :
49
Lastpage :
53
Abstract :
An electrothermal model was developed for the built-in VDMOSFET diode. This model calculates the static and dynamic characteristics of the diode by taking into account the heating effect due to the diode´s own losses and those of the VDMOSFET. The model´s parameters were calculated from the catalog data, known relations from literature and the curve of the measured transient thermal impedance for constant current. The accuracy of the model in a simulation of the temperature dependence of the forward characteristic and the time course of silicon temperature was checked with a MEDICI two-dimensional device simulator.
Keywords :
MOSFET; SPICE; heating; losses; semiconductor device measurement; semiconductor device models; semiconductor diodes; thermal analysis; transient analysis; MEDICI 2D device simulator; Spice compatible electrothermal model; VDMOSFET losses; built-in VDMOSFET diode; diode catalog data; diode losses; dynamic characteristics; forward characteristic temperature dependence; heating effect; measured transient thermal impedance; model parameters; model simulation accuracy; silicon temperature time course; static characteristics; Cooling; Electrothermal effects; Impedance; Light emitting diodes; Nonlinear equations; SPICE; Silicon; Temperature dependence; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference, 2002. MELECON 2002. 11th Mediterranean
Print_ISBN :
0-7803-7527-0
Type :
conf
DOI :
10.1109/MELECON.2002.1014528
Filename :
1014528
Link To Document :
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