DocumentCode
1890929
Title
Electroless deposition of bumps for TAB technology
Author
Simon, J. ; Zakel, E. ; Reichl, H.
Author_Institution
Tech. Univ., Berlin, Germany
fYear
1990
fDate
20-23 May 1990
Firstpage
412
Abstract
Electroless nickel plating was investigated for bumping. Electroless nickel bumps with a height of 265 μm have been selectively formed on aluminium bondpads. The nickel bumps have been inner-lead-bonded by gang bonding to a tape with a thick layer of tin. The adhesion of the bumps was investigated as a function of the pretreatment of the bondpads. It is noted that electroless bumping offers the greatest advantage of reducing the costs of the bumping process because no sputtering equipment or lithography is required. This can be very important if only small quantities of bumped dies are required because the process is independent of substrate size. Electroless bumping may become an alternative to conventional wafer bumping by electrodeposition at least for certain applications
Keywords
VLSI; electroless deposition; nickel; tape automated bonding; 265 micron; Al pads; Ni-Al bumps; TAB technology; electroless Ni plating; electroless bumping; gang bonding; inner-lead-bonded; small quantities of bumped dies; small scale production; Adhesives; Aluminum; Copper; Gold; Morphology; Nickel; Resists; Substrates; Wafer bonding; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1990. ., 40th
Conference_Location
Las Vegas, NV
Type
conf
DOI
10.1109/ECTC.1990.122223
Filename
122223
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