• DocumentCode
    1890929
  • Title

    Electroless deposition of bumps for TAB technology

  • Author

    Simon, J. ; Zakel, E. ; Reichl, H.

  • Author_Institution
    Tech. Univ., Berlin, Germany
  • fYear
    1990
  • fDate
    20-23 May 1990
  • Firstpage
    412
  • Abstract
    Electroless nickel plating was investigated for bumping. Electroless nickel bumps with a height of 265 μm have been selectively formed on aluminium bondpads. The nickel bumps have been inner-lead-bonded by gang bonding to a tape with a thick layer of tin. The adhesion of the bumps was investigated as a function of the pretreatment of the bondpads. It is noted that electroless bumping offers the greatest advantage of reducing the costs of the bumping process because no sputtering equipment or lithography is required. This can be very important if only small quantities of bumped dies are required because the process is independent of substrate size. Electroless bumping may become an alternative to conventional wafer bumping by electrodeposition at least for certain applications
  • Keywords
    VLSI; electroless deposition; nickel; tape automated bonding; 265 micron; Al pads; Ni-Al bumps; TAB technology; electroless Ni plating; electroless bumping; gang bonding; inner-lead-bonded; small quantities of bumped dies; small scale production; Adhesives; Aluminum; Copper; Gold; Morphology; Nickel; Resists; Substrates; Wafer bonding; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1990. ., 40th
  • Conference_Location
    Las Vegas, NV
  • Type

    conf

  • DOI
    10.1109/ECTC.1990.122223
  • Filename
    122223