Title :
Improved physical modelling for accurate simulation of bipolar effects in thin film SOI MOSFETs
Author :
Armstrong, G.A. ; French, W.D.
Author_Institution :
Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK
Abstract :
The significance of incorporating improved physical models for bandgap narrowing and impact ionization to accurately model the characteristics of the parasitic transistor is discussed. Accurate simulation of the bipolar breakdown of ultrathin-film SOI transistors requires the correct balance between the current gain and the impact ionization rate. The current gain is strongly dependent upon bandgap narrowing and SOI film doping. Impact ionization may be reduced, and the holding voltage increased, in ultrathin-film devices with a heavily doped film and the inclusion of an optimized LDD
Keywords :
energy gap; impact ionisation; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors; SOI film doping; bandgap narrowing; bipolar breakdown; bipolar effects simulation; current gain; heavily doped film; holding voltage; impact ionization; optimized LDD; parasitic transistor; physical modelling; thin film SOI MOSFETs; Bipolar transistors; Doping; Electric breakdown; Impact ionization; MOSFETs; Photonic band gap; Predictive models; Semiconductor process modeling; Surface fitting; Voltage;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162849
