DocumentCode
1891138
Title
In-situ polymer buildup monitoring in plasma etching systems [micromachined sensor]
Author
Kim, Jinsoo ; Wise, Kensall D. ; Grizzle, Jessy W.
Author_Institution
Center for Integrated Sensors & Circuits, Michigan Univ., Ann Arbor, MI, USA
fYear
1997
fDate
6-8 Oct 1997
Abstract
This paper reports a micromachined sensor for the direct in-situ measurement of polymer buildup in plasma etching systems. The sensor is based on an electrothermal oscillator that measures the thermal mass change as polymer builds up on a stress-compensated dielectric window containing metal film heating and sensing resistors. The change in the thermal mass of the window can be detected as a variation in the pulse width (cooling time) of the oscillation. The device operates with a typical cooling time of 2.7 msec and has a measurement resolution of <1 nm. The device is flush-mounted in the chamber wall with the exposed window area protected by a thin film of iridium against damage by the plasma
Keywords
mass measurement; microsensors; sputter etching; surface contamination; thickness measurement; Schmitt trigger; chamber wall; cooling time; direct in-situ measurement; electrothermal oscillator; flush-mounted device; in-situ polymer buildup monitoring; metal film heating/sensing resistors; micromachined sensor; plasma etching systems; polymer thickness measurement; pulse width variation; stress-compensated dielectric window; thermal mass change; Cooling; Dielectric measurements; Electrothermal effects; Etching; Monitoring; Plasma applications; Plasma measurements; Polymer films; Sensor systems; Thermal sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-3752-2
Type
conf
DOI
10.1109/ISSM.1997.664506
Filename
664506
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