Title :
A rapid evaluation technique for porous silicon structures
Author :
Burch, R. ; Farr, J.P.G. ; Keen, J.M. ; Stiebahl, K.C.
Author_Institution :
Dept. of Chem., Reading Univ., UK
Abstract :
Experiments designed to determine the feasibility of using field emission-SEM to characterize porous silicon (PS) are described. By modifying the anodizing conditions and the starting material type and resistivity, porous structures can be produced ranging from microporous (<2 nm) to macroporous (>20 nm). The resulting structures can then be characterized by gravimetric, BET and FE-SEM, while also investigating the limitations of BET and FE-SEM
Keywords :
elemental semiconductors; field emission electron microscopy; porous materials; scanning electron microscope examination of materials; silicon; 2 to 20 nm; BET; anodizing conditions; field emission-SEM; gravimetric technique; porous Si structures; rapid evaluation technique; Chemistry; Conductivity; Information analysis; Loss measurement; Manufacturing; Metallization; Reservoirs; Silicon; Surface topography; Volume measurement;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162855
