DocumentCode :
1891267
Title :
Polysilicon hollow beam lateral resonators
Author :
Judy, Michael W. ; Howe, Roger T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear :
1993
fDate :
7-10 Feb 1993
Firstpage :
265
Lastpage :
271
Abstract :
The first microfabrication of hollow polysilicon beams is reported. Arrays of lateral resonators are designed, processed, and tested with resonant frequencies from 8 kHz to 0.5 MHz. The quality factor as a function of pressure of the hollow beam resonators is compared with solid beam resonators, and values as high as 34000 are obtained in vacuum. The hollow beam resonators are verified with theory and compared to resonators with solid cross sections
Keywords :
Q-factor; electric sensing devices; elemental semiconductors; etching; masks; micromechanical devices; photolithography; resonators; silicon; 8 kHz to 0.5 MHz; Si; anisotropic etching; elemental semiconductor; hollow beam lateral resonators; hollow polysilicon beams; microfabrication; micromechanical structures; pressure dependence; quality factor; sidewall-space technique; six-mask process; surface micromachining; Actuators; Etching; Fabrication; Laboratories; Microstructure; Optical resonators; Process design; Resonant frequency; Solids; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 1993, MEMS '93, Proceedings An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE.
Conference_Location :
Fort Lauderdale, FL
Print_ISBN :
0-7803-0957-X
Type :
conf
DOI :
10.1109/MEMSYS.1993.296911
Filename :
296911
Link To Document :
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