DocumentCode
1891434
Title
Fast delay estimation with buffer insertion for through-silicon-via-based 3D interconnects
Author
Lee, Young-Joon ; Lim, Sung Kyu
Author_Institution
Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2012
fDate
19-21 March 2012
Firstpage
228
Lastpage
335
Abstract
For successful adoption of through-silicon-via-based 3D ICs, delay estimation techniques of 3D interconnects for early design stages are required. The 3D nets may connect gates/macros placed far apart and through-silicon-vias (TSVs) have large parasitic capacitances. Thus, buffers are inserted to reduce interconnect delay. To make good decisions in early design stages, the estimation of buffered delay should be fast and reasonably accurate. However, there has been no buffered delay estimation work for 3D ICs that considers proper delay models and TSV RC parasitics. In this work, we investigate several analytical delay models for 3D net delay estimation. Then, based on analytical formula and our heuristic algorithm, we propose how to estimate the buffered delay for movable TSV cases and fixed TSV cases. The effectiveness of our delay estimation technique is demonstrated with various 3D nets. Compared with the van Ginneken buffer insertion based delay estimation, our estimation provides solutions about 750 times faster with almost the same estimated delay.
Keywords
integrated circuit interconnections; three-dimensional integrated circuits; 3D net delay estimation; TSV RC parasitics; buffer insertion; buffered delay estimation; delay model; heuristic algorithm; parasitic capacitance; through-silicon-via-based 3D IC; through-silicon-via-based 3D interconnect; Capacitance; Delay estimation; Logic gates; Mathematical model; Three dimensional displays; Through-silicon vias; 3D IC; buffer insertion; delay estimation; through-silicon-via;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2012 13th International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1948-3287
Print_ISBN
978-1-4673-1034-5
Type
conf
DOI
10.1109/ISQED.2012.6187499
Filename
6187499
Link To Document