DocumentCode :
1891584
Title :
A passive, in situ micro strain gauge
Author :
Lin, Liwei ; Howe, Roger T. ; Pisano, Albert P.
Author_Institution :
California Univ., Berkeley, CA, USA
fYear :
1993
fDate :
7-10 Feb 1993
Firstpage :
201
Lastpage :
206
Abstract :
A passive micro strain gauge based on the strain magnification technique has been designed, demonstrated, and characterized. This strain gauge can be fabricated in situ along with active micro sensors or actuators on the same chip for monitoring residual strain effects. Both tensile or compressive strain could be easily observed under optical microscopes and the resolution of strains as small as 0.001% could be achieved. The residual strain study of RTA (rapid thermal annealing) polysilicon is reported
Keywords :
electric sensing devices; micromechanical devices; strain gauges; MEMS; RTA; Si; compressive strain; in situ micro strain gauge; passive micro strain gauge; polysilicon; residual strain effects; strain magnification technique; tensile strain; Actuators; Capacitive sensors; Frequency measurement; Optical films; Residual stresses; Sensor phenomena and characterization; Strain measurement; Stress measurement; Tensile strain; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 1993, MEMS '93, Proceedings An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE.
Conference_Location :
Fort Lauderdale, FL
Print_ISBN :
0-7803-0957-X
Type :
conf
DOI :
10.1109/MEMSYS.1993.296922
Filename :
296922
Link To Document :
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