A Monte Carlo simulation of reproducible hysteresis in RRAM

A generalization of the stochastic model of the resistive switching mechanism in bipolar metal-oxide-based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is checked with respect to results of previously published work. A hysteresis cycle of a RRAM simulated with our generalized stochastic model is in agreement with experimental results. Time-dependent simulations indicate that a proper conducting filament rapture during the RESET process is achieved, when the product "voltage - time" is maximal. Simulations of multiple switching cycles with help of the generalized stochastic model open the path towards parameter optimization to maximize the RRAM endurance.