Title : 
Quantum transport of Dirac fermions in graphene nanostructures
         
        
            Author : 
Dollfus, Philippe ; Nguyen, Viet Hung ; Van Nam Do ; Bournel, Arnaud
         
        
            Author_Institution : 
Inst. of Fundamental Electron. (IEF), Univ. Paris-Sud, Orsay, France
         
        
        
        
        
        
            Abstract : 
An effective approach of quantum transport of Dirac carriers in mono- and bi-layer graphene structures and devices is presented. Initially based on the Green´s function formalism to treat the Dirac Hamiltonian of massless particles in two-dimensional mono-layer graphene, the model has been extended to to small bandgap materials and to bi-layer graphene with massive carriers. It is applied to investigate some transport problems as the minimum conductivity, the tunneling properties the spin-polarized transport through single-barrier structures, and the operation of graphene field-effect transistors.
         
        
            Keywords : 
Green´s function methods; fermions; field effect transistors; graphene; monolayers; quantum interference phenomena; spin polarised transport; tunnelling; C; Dirac fermions; Green´s function formalism; bilayer graphene; graphene field-effect transistors; graphene nanostructures; quantum transport; single-barrier structures; spin-polarized transport; tunneling properties; two-dimensional monolayer graphene; Charge carrier processes; Conductivity; Impurities; Logic gates; Photonic band gap; Tunneling; Dirac fermions; Green´s function; graphene;
         
        
        
        
            Conference_Titel : 
Computational Electronics (IWCE), 2010 14th International Workshop on
         
        
            Conference_Location : 
Pisa
         
        
            Print_ISBN : 
978-1-4244-9383-8
         
        
        
            DOI : 
10.1109/IWCE.2010.5677935