On the role of line-edge roughness on the diffusion and localization in GNRs

Author

Pourfath, M. ; Yazdanpanah, A. ; Fathipour, M. ; Kosina, H.

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

In this work a comprehensive study of the effect of line-edge roughness on the electronic properties of graphene nanoribbons is presented. The effect of roughness parameters and the role of device geometry is discussed. Depending on these parameters, carrier transport can be in the quasi ballistic, diffusive, or localization regime. Our results show the transport gap of nanoribbons can increase due to the presence of line-edge roughness.

Keywords

Green´s function methods; ballistic transport; carrier mobility; diffusion; graphene; localised states; nanostructured materials; surface roughness; tight-binding calculations; C; carrier transport; device geometry; diffusion; diffusive transport; electronic properties; graphene nanoribbons; line-edge roughness; localization regime; nanoribbon transport gap; quasiballistic transport; roughness parameter effect; Carbon; Carbon nanotubes; Correlation; Green´s function methods; Numerical models; Scattering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677936

Filename

5677936