DocumentCode :
1891639
Title :
Analysis of crosstalk delay and area for MWNT and bundled SWNT in global VLSI interconnects
Author :
Majumder, Manoj Kumar ; Pandya, Nisarg D. ; Kaushik, B.K. ; Manhas, S.K.
Author_Institution :
Dept. of Electron. & Comput. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India
fYear :
2012
fDate :
19-21 March 2012
Firstpage :
291
Lastpage :
297
Abstract :
Carbon nanotubes (CNTs) are one of the most promising interconnect material for future deep-submicron and nano scale technology. They are more advantageous than copper or other interconnect materials because of their robustness to electromigration. In this paper, the RLC interconnect models are presented on basis of multi-walled CNT (MWNT) and bundled single-walled CNT (SWNT) by including the concept of CMOS driver. By performing HSPICE simulations, the effect of crosstalk is examined for the both kinds of CNTs. A comparative analysis has been done for crosstalk delay and area for these both kinds of CNTs. From simulation results, it has been observed that numbers of SWNTs in bundle are more than the number of shells in MWNTs for same performance of crosstalk delay. Furthermore, irrespective of the type of CNTs, crosstalk delay is extensively affected by transition time, diameter of CNTs and spacing between two lines (generally referred as aggressor and victim).
Keywords :
SPICE; VLSI; carbon nanotubes; integrated circuit interconnections; CNT; HSPICE simulations; MWNT; RLC interconnect models; bundled SWNT; bundled single-walled CNT; carbon nanotubes; crosstalk delay; deep-submicron technology; global VLSI interconnects; interconnect material; multiwalled CNT; nanoscale technology; CMOS integrated circuits; Capacitance; Crosstalk; Delay; Integrated circuit interconnections; Resistance; Semiconductor device modeling; Carbon nanotube; MWNT; SWNT bundle; VLSI; aggressor and victim; area; interconnect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2012 13th International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1948-3287
Print_ISBN :
978-1-4673-1034-5
Type :
conf
DOI :
10.1109/ISQED.2012.6187508
Filename :
6187508
Link To Document :
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