• DocumentCode
    1891639
  • Title

    Analysis of crosstalk delay and area for MWNT and bundled SWNT in global VLSI interconnects

  • Author

    Majumder, Manoj Kumar ; Pandya, Nisarg D. ; Kaushik, B.K. ; Manhas, S.K.

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India
  • fYear
    2012
  • fDate
    19-21 March 2012
  • Firstpage
    291
  • Lastpage
    297
  • Abstract
    Carbon nanotubes (CNTs) are one of the most promising interconnect material for future deep-submicron and nano scale technology. They are more advantageous than copper or other interconnect materials because of their robustness to electromigration. In this paper, the RLC interconnect models are presented on basis of multi-walled CNT (MWNT) and bundled single-walled CNT (SWNT) by including the concept of CMOS driver. By performing HSPICE simulations, the effect of crosstalk is examined for the both kinds of CNTs. A comparative analysis has been done for crosstalk delay and area for these both kinds of CNTs. From simulation results, it has been observed that numbers of SWNTs in bundle are more than the number of shells in MWNTs for same performance of crosstalk delay. Furthermore, irrespective of the type of CNTs, crosstalk delay is extensively affected by transition time, diameter of CNTs and spacing between two lines (generally referred as aggressor and victim).
  • Keywords
    SPICE; VLSI; carbon nanotubes; integrated circuit interconnections; CNT; HSPICE simulations; MWNT; RLC interconnect models; bundled SWNT; bundled single-walled CNT; carbon nanotubes; crosstalk delay; deep-submicron technology; global VLSI interconnects; interconnect material; multiwalled CNT; nanoscale technology; CMOS integrated circuits; Capacitance; Crosstalk; Delay; Integrated circuit interconnections; Resistance; Semiconductor device modeling; Carbon nanotube; MWNT; SWNT bundle; VLSI; aggressor and victim; area; interconnect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2012 13th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1948-3287
  • Print_ISBN
    978-1-4673-1034-5
  • Type

    conf

  • DOI
    10.1109/ISQED.2012.6187508
  • Filename
    6187508