Phonon and electron transport in graphene nanoribbons

Author

Mazzamuto, F. ; Nguyen, V.Hung ; Do, V. Nam ; Caër, C. ; Chassat, C. ; Saint-Martin, J. ; Dollfus, P.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

An atomistic Green´s function approach to simulating electron and phonon transport in graphene nanoribbons (GNRs) is presented. Phonons are described by an empirical Force-Constant model including interactions up to the fifth nearest neighbour while the nearest neighbour tight-binding Hamiltonian is used for electrons. The model was applied to investigate the edge dependence of GNR thermoelectric properties. The factor of merit ZT appears to be strongly enhanced in mixed-edge ribbons.

Keywords

Green´s function methods; graphene; nanostructured materials; phonons; thermoelectricity; tight-binding calculations; C; atomistic Green´s function; electron transport; empirical force-constant model; graphene nanoribbons; phonon transport; thermoelectric properties; tight-binding Hamiltonian; Chemical elements; Chemicals; Electric potential; Green´s function methods; Phonons; Photonic band gap; Thermal conductivity; Electron; Graphene; NEGF; Nanoribbon; Phonon; Thermoelectric; Transport;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677937

Filename

5677937