All-optical wavelength conversion at 160Gb/s by intersubband transition switches utilizing efficient XPM in InGaAs/AlAsSb coupled double quantum well

Author

Akimoto, R. ; Gozu, S. ; Mozume, T. ; Akita, K. ; Cong, G.W. ; Hasama, T. ; Ishikawa, H.

Author_Institution

Network Photonics Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

fYear

2009

fDate

20-24 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

We report all-optical wavelength conversion of 160-Gb/s signal by intersubband transition switches with signal pulse energy as low as sub-pJ, which is enabled by newly designed InGaAs/AlGaAs/AlAsSb coupled double quantum wells exhibiting the enhanced cross-phase modulation.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; optical fibre communication; optical modulation; optical switches; optical wavelength conversion; phase modulation; quantum well devices; InGaAs-AlGaAs-AlAsSb; all-optical wavelength conversion; bit rate 160 Gbit/s; coupled double quantum well design; efficient XPM; enhanced cross-phase modulation; intersubband transition switches; optical fiber communication systems; signal pulse energy; Absorption; Bit error rate; Indium gallium arsenide; Optical fiber polarization; Optical modulation; Optical waveguides; Optical wavelength conversion; RF signals; Switches; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 2009. ECOC '09. 35th European Conference on

Conference_Location

Vienna

Print_ISBN

978-1-4244-5096-1

Type

conf

Filename

5287423