Title :
SCREAM I: A single mask, single-crystal silicon process for microelectromechanical structures
Author :
Shaw, Kevin A. ; Zhang, Z. Lisa ; MacDonald, Noel C.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A process outline for a one-mask version of the single-crystal silicon reactive etch and metal (SCREAM) process called SCREAM-I, for fabricating silicon microelectromechanical (MEM) devices, is presented. The process defines single-crystal silicon (SCS) high-aspect ratio beams using submicron optical lithography. The process defines MEM devices with a single mask, including contact pads, interconnects, released beams, and lateral capacitors. SCREAM 1 is a self-aligned, low-temperature (<300°C) process that can be completed in ≈6-8 hr. All fabrication steps rely on industry standard, high-throughput fabrication tools. Beam elements 0.5 μm to 5 μm in width can be fabricated with aspect ratios of greater than 10 to 1
Keywords :
integrated circuit technology; masks; micromechanical devices; photolithography; sputter etching; 0.5 to 5 micron; RIE; SCREAM-I; Si; bulk micromachining; contact pads; elemental semiconductor; high-aspect ratio beams; interconnects; lateral capacitors; low-temperature; microelectromechanical structures; reactive etch and metal process; released beams; self-aligned; single crystal Si; single mask; submicron optical lithography; Chemical technology; Chemistry; Etching; Lithography; Micromachining; Optical beams; Optical device fabrication; Plasma temperature; Silicon; Substrates;
Conference_Titel :
Micro Electro Mechanical Systems, 1993, MEMS '93, Proceedings An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE.
Conference_Location :
Fort Lauderdale, FL
Print_ISBN :
0-7803-0957-X
DOI :
10.1109/MEMSYS.1993.296930