Effects of deviations in the cross-section of square nanowires

The downscaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) is a major priority nowadays due to its important advantages. As the size of such devices keeps shrinking, it gets harder to control the shape of the device and variations from the ideal square shape occurs very often. In this work we study the effects of such shape variability in Silicon nanowires with different size and orientations and under strain. A significant effect is observed in phonon limited electron mobility due to changes in population as well as in wave function overlapping.