Title :
Advanced design of high-linearity analog predistortion Doherty amplifiers using spectrum analysis for WCDMA applications
Author :
Lee, Yong-Sub ; Lee, Mun-Woo ; Kam, Sang-Ho ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
This paper represents the advanced design methods of a high-linearity analog predistortion Doherty power amplifier (DPA) using spectrum analysis for WCDMA applications. For the analog predistortion linearization, the DPA utilizes the bandwidth reduction of the error signal, linear AM/AM characteristic without any abrupt change, and memory effect reduction. To verify our methods, the asymmetrical Doherty amplifier using a RFHIC RT440 40-W push-pull type GaN HEMT and the analog predistorter with a diode-based error generator and three-branch nonlinear paths are implemented at 2.14 GHz. From the measured one-carrier WCDMA results at an average output power of 34 dBm (11-dB back-off power from the saturation power), the analog predistortion DPA with a drain bias voltage of carrier cell of 34V shows an ACLR of -54 dBc at ±2.5 offsets with a power-added efficiency of 18.9%.
Keywords :
III-V semiconductors; UHF power amplifiers; code division multiple access; gallium compounds; high electron mobility transistors; GaN; RFHIC RT440 40-W push-pull type HEMT; WCDMA Applications; asymmetrical Doherty amplifier; bandwidth reduction; diode-based error generator; frequency 2.14 GHz; high-linearity analog predistortion Doherty power amplifiers; linear AM-AM characteristic; memory effect reduction; spectrum analysis; three-branch nonlinear paths; voltage 34 V; wideband code division multiple access; Bandwidth; Design methodology; Diodes; Gallium nitride; HEMTs; High power amplifiers; Multiaccess communication; Power generation; Power measurement; Predistortion; Analog predistorter; Doherty amplifier; linearity; power amplifiers; spectrum;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2010 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-4725-1
Electronic_ISBN :
978-1-4244-4726-8
DOI :
10.1109/RWS.2010.5434122