Title :
An IGBT with sustaining voltage determined by an integrated collector-gate clamp
Abstract :
An insulated gate bipolar transistor (IGBT) with an integrated gate-collector clamp diode is discussed. This added feature provides protection from self-avalanche and provides a tight control of sustaining voltage over temperature. The on-chip integration of this feature eliminates two or more external components previously used in many applications. The device displays characteristics that are advantageous in applications such as automotive ignition drivers and industrial motor controls.<>
Keywords :
Zener diodes; bipolar transistors; insulated gate field effect transistors; power transistors; IGBT; automotive ignition drivers; diode; industrial motor controls; insulated gate bipolar transistor; integrated collector-gate clamp; on-chip integration; power transistors; protection; self-avalanche; sustaining voltage; Automotive engineering; Clamps; Diodes; Displays; Ignition; Industrial control; Insulated gate bipolar transistors; Protection; Temperature control; Voltage control;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1990. APEC '90, Conference Proceedings 1990., Fifth Annual
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/APEC.1990.66451
