DocumentCode
1891956
Title
An IGBT with sustaining voltage determined by an integrated collector-gate clamp
Author
Phipps, John
fYear
1990
fDate
11-16 March 1990
Firstpage
476
Lastpage
480
Abstract
An insulated gate bipolar transistor (IGBT) with an integrated gate-collector clamp diode is discussed. This added feature provides protection from self-avalanche and provides a tight control of sustaining voltage over temperature. The on-chip integration of this feature eliminates two or more external components previously used in many applications. The device displays characteristics that are advantageous in applications such as automotive ignition drivers and industrial motor controls.<>
Keywords
Zener diodes; bipolar transistors; insulated gate field effect transistors; power transistors; IGBT; automotive ignition drivers; diode; industrial motor controls; insulated gate bipolar transistor; integrated collector-gate clamp; on-chip integration; power transistors; protection; self-avalanche; sustaining voltage; Automotive engineering; Clamps; Diodes; Displays; Ignition; Industrial control; Insulated gate bipolar transistors; Protection; Temperature control; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1990. APEC '90, Conference Proceedings 1990., Fifth Annual
Conference_Location
Los Angeles, CA, USA
Type
conf
DOI
10.1109/APEC.1990.66451
Filename
66451
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