Title :
A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors
Author :
Fiori, G. ; Lebègue, S. ; Betti, A. ; Michetti, P. ; Klintenberg, M. ; Eriksson, O. ; Iannaccone, G.
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa, Italy
Abstract :
Performance analysis of Field Effect Transistors based on hydrogenated graphene is performed through a multi-scale approach based on calculations of the energy bands by means of GW approximation, a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and a ballistic transport model. The considered device exhibits large Ion and Ion/Ioff ratios, due to the large bandgap, with reduced lithographic constrains as compared to one-dimensional channels.
Keywords :
ballistic transport; field effect transistors; graphene; hydrogen; tight-binding calculations; C:H; GW approximation; ballistic transport model; hydrogenated graphene field-effect transistors; performance assessment; three-nearest neighbor tight-binding Hamiltonian; Approximation methods; Computational modeling; Discrete Fourier transforms; Electrostatics; Logic gates; Performance evaluation; Photonic band gap;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677955
