DocumentCode
1892190
Title
Ab-initio calibration of the empirical pseudopotential method for strained silicon
Author
Heinz, Frederik Ole ; Smith, Lee
Author_Institution
Synopsys Switzerland LLC, Zurich, Switzerland
fYear
2010
fDate
26-29 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
Full Brillouin zone ab-initio band-structure data was computed for a range of different strain configurations. This data was then used as target data set for the calibration of empirical pseudopotential parameters. Energy dependent statistical weights were used to emphasize critical features. The resulting pseudopotential parameterization was validated by comparing the strain dependence of density-of-states data obtained using empirical pseudopotentials to corresponding ab-initio results. Bulk Monte Carlo simulations were performed to study the strain induced mobility response.
Keywords
Monte Carlo methods; ab initio calculations; band structure; calibration; electron mobility; elemental semiconductors; pseudopotential methods; silicon; Si; bulk Monte Carlo simulations; calibration; empirical pseudopotential method; energy dependent statistical weights; full Brillouin zone ab initio band structure data; strain configurations; strain induced mobility response; strained silicon; Calibration; Charge carrier processes; Crystals; Scattering; Silicon; Strain; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location
Pisa
Print_ISBN
978-1-4244-9383-8
Type
conf
DOI
10.1109/IWCE.2010.5677960
Filename
5677960
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