• DocumentCode
    1892190
  • Title

    Ab-initio calibration of the empirical pseudopotential method for strained silicon

  • Author

    Heinz, Frederik Ole ; Smith, Lee

  • Author_Institution
    Synopsys Switzerland LLC, Zurich, Switzerland
  • fYear
    2010
  • fDate
    26-29 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Full Brillouin zone ab-initio band-structure data was computed for a range of different strain configurations. This data was then used as target data set for the calibration of empirical pseudopotential parameters. Energy dependent statistical weights were used to emphasize critical features. The resulting pseudopotential parameterization was validated by comparing the strain dependence of density-of-states data obtained using empirical pseudopotentials to corresponding ab-initio results. Bulk Monte Carlo simulations were performed to study the strain induced mobility response.
  • Keywords
    Monte Carlo methods; ab initio calculations; band structure; calibration; electron mobility; elemental semiconductors; pseudopotential methods; silicon; Si; bulk Monte Carlo simulations; calibration; empirical pseudopotential method; energy dependent statistical weights; full Brillouin zone ab initio band structure data; strain configurations; strain induced mobility response; strained silicon; Calibration; Charge carrier processes; Crystals; Scattering; Silicon; Strain; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2010 14th International Workshop on
  • Conference_Location
    Pisa
  • Print_ISBN
    978-1-4244-9383-8
  • Type

    conf

  • DOI
    10.1109/IWCE.2010.5677960
  • Filename
    5677960