DocumentCode
1892376
Title
Highly uniform 4-inch diameter ingaas/inp epitaxial wafer for pin-pd application
Author
Doi, H. ; Iguchi, Y. ; Kimura, H. ; Iwasaki, T. ; Mirua, Y. ; Yokogawa, M.
Author_Institution
Epi Solution Division
fYear
2002
fDate
2002
Keywords
Costs; Dark current; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Manufacturing; Optical microscopy; Research and development; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN
1092-8669
Print_ISBN
0-7803-7320-0
Type
conf
DOI
10.1109/ICIPRM.2002.1014588
Filename
1014588
Link To Document