Stackable devices based on chaotic conduction

In this work electrical conduction of chaotic systems, made of nanocrystals with random diameter and position embedded in a dielectric media, will be investigated by means of Monte Carlo simulations. In particular, it will be shown that the Source to Drain conductivity of devices, whose active area is a nanocrystalline film, can be modified by means of a Gate that is in the same plane of the film. Despite the chaotic conduction driven by charge hopping between nanocrystals in the film, it will be shown that an almost deterministic behavior can be obtained for a suitable nanocrystal concentration. Transistors based on this concept could be realized on different layers, on the same substrate, with technologies similar to those actually used for conventional integrated circuits: this would make possible an effective 3D integration of devices and circuits.