Monte Carlo simulation study of hole mobility in germanium MOS inversion layers

Author

Riddet, C. ; Watling, J.R. ; Chan, K.H. ; Asenov, A. ; De Jaeger, Brice ; Mitard, Jerome ; Meuris, Marc

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

In this paper transport in the inversion layer of a Ge channel pMOS structure is studied using a full 6-band k·p Monte Carlo simulator. In addition to the usual bulk-scattering mechanisms, which are calibrated and validated against the available experimental data, effects of the gate stack are included via SO phonons and surface roughness scattering. Through careful calibration and consideration of these mechanisms, good qualitative and quantitative agreement is achieved with experimental data.

Keywords

MIS structures; Monte Carlo methods; calibration; elemental semiconductors; germanium; hole mobility; inversion layers; k.p calculations; phonons; surface roughness; 6-band k.p Monte Carlo simulation; Ge; SO phonons; bulk-scattering mechanisms; calibration; channel pMOS structure; gate stack; germanium MOS inversion layers; hole mobility; surface roughness scattering; Logic gates; Monte Carlo methods; Phonons; Rough surfaces; Scattering; Silicon; Surface roughness; Monte Carlo; full band; germanium; high-K; pMOSFET; surface roughness scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677972

Filename

5677972