Title :
A high power and highly efficient multi-band power amplifier for mobile terminals
Author :
Fukuda, Atsushi ; Kawai, Kunihiro ; Furuta, Takayuki ; Okazaki, Hiroshi ; Oka, Sinya ; Narahashi, Shoichi ; Murase, Atsushi
Author_Institution :
NTT DOCOMO, INC., Yokosuka, Japan
Abstract :
This paper presents a highly efficient multi-band heterojunction bipolar transistor power amplifier (PA) employing reconfigurable matching networks (MNs). The MN consists of field effect transistor switches and achieves the desired matching condition in the target frequency band by controlling the on/off status of switches. The fabricated reconfigurable PA has 3-stage and operates in 9 bands from 0.7 to 2.5 GHz, i.e., 0.7, 0.8, 0.9, 1.4, 1.7, 1.8, 1.9, 2.3, and 2.5-GHz bands, with over a 30 dB gain. It also achieves an output power of greater than 34 dBm and a power added efficiency of over 40% at the supply voltage of 3.5 V in each operating band.
Keywords :
UHF amplifiers; heterojunction bipolar transistors; mobile communication; power amplifiers; fabricated reconfigurable power amplifier; field effect transistor switches; frequency 0.7 GHz to 2.5 GHz; gain 30 dB; highly efficient multiband power amplifier; mobile terminals; multiband heterojunction bipolar transistor power amplifier; reconfigurable matching networks; voltage 3.5 V; High power amplifiers; matching network; multi-band; power amplifiers; reconfigurable; switch;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2010 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-4725-1
Electronic_ISBN :
978-1-4244-4726-8
DOI :
10.1109/RWS.2010.5434152
