A high power and highly efficient multi-band power amplifier for mobile terminals

Author

Fukuda, Atsushi ; Kawai, Kunihiro ; Furuta, Takayuki ; Okazaki, Hiroshi ; Oka, Sinya ; Narahashi, Shoichi ; Murase, Atsushi

Author_Institution

NTT DOCOMO, INC., Yokosuka, Japan

fYear

2010

fDate

10-14 Jan. 2010

Firstpage

45

Lastpage

48

Abstract

This paper presents a highly efficient multi-band heterojunction bipolar transistor power amplifier (PA) employing reconfigurable matching networks (MNs). The MN consists of field effect transistor switches and achieves the desired matching condition in the target frequency band by controlling the on/off status of switches. The fabricated reconfigurable PA has 3-stage and operates in 9 bands from 0.7 to 2.5 GHz, i.e., 0.7, 0.8, 0.9, 1.4, 1.7, 1.8, 1.9, 2.3, and 2.5-GHz bands, with over a 30 dB gain. It also achieves an output power of greater than 34 dBm and a power added efficiency of over 40% at the supply voltage of 3.5 V in each operating band.

Keywords

UHF amplifiers; heterojunction bipolar transistors; mobile communication; power amplifiers; fabricated reconfigurable power amplifier; field effect transistor switches; frequency 0.7 GHz to 2.5 GHz; gain 30 dB; highly efficient multiband power amplifier; mobile terminals; multiband heterojunction bipolar transistor power amplifier; reconfigurable matching networks; voltage 3.5 V; High power amplifiers; matching network; multi-band; power amplifiers; reconfigurable; switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2010 IEEE

Conference_Location

New Orleans, LA

Print_ISBN

978-1-4244-4725-1

Electronic_ISBN

978-1-4244-4726-8

Type

conf

DOI

10.1109/RWS.2010.5434152

Filename

5434152