DocumentCode
1892545
Title
SPICE simulation of thin-film SOI IGFETs using the BSIM2 model
Author
Tipton, C. Wesley ; Peckerar, Martin
fYear
1991
fDate
1-3 Oct 1991
Firstpage
68
Lastpage
69
Abstract
The Berkeley short-channel IGFET (insulated-gate field effect transistor) model (BSIM2) has been successfully used to simulate the operation of fully depleted SOI (silicon-on-insulator) IGFETs. By modifying existing BSIM2 parameter extraction algorithms to account for the characteristics of thin-film transistors, good agreement has been obtained between the measured and simulated performances of a wide variety of these devices
Keywords
Circuit simulation; Design automation; Laboratories; Optimization methods; Parameter extraction; SPICE; Software packages; Solid modeling; Thin film circuits; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location
Vail Valley, CO
Print_ISBN
0-7803-0184-6
Type
conf
DOI
10.1109/SOI.1991.162860
Filename
162860
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