Title :
A 2.14 GHz GaN power amplifier with 1-bit discrete power control
Author :
Mercanti, Massimiliano ; Cidronali, Alessandro ; Magrini, Iacopo ; Manes, Gianfranco
Author_Institution :
Dept. Electron. & Telecomm, Univ. of Florence, Florence, Italy
Abstract :
This paper focuses a GaN HEMT power amplifier with 1-bit power control and provides experimental data. It relies on a new concept of power combining allowed by an adaptive gate bias control scheme. At 2.1 GHz CW the discrete power control technique enables a linear factor 3.3 efficiency enhancement at the maximum power back-off of 7 dB, while a maximum output power of 34 dBm and a peak drain efficiency of 35%.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; 1-bit discrete power control; discrete power control technique; frequency 2.14 GHz; maximum power back-off; peak drain efficiency; power amplifier; Direction of arrival estimation; Directional antennas; Directive antennas; Gallium nitride; Interference; Performance analysis; Power amplifiers; Power control; Space technology; Telecommunication switching; GaN PA; efficiency enhancement; power control;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2010 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-4725-1
Electronic_ISBN :
978-1-4244-4726-8
DOI :
10.1109/RWS.2010.5434154
