The BITLLES simulator for nanoscale devices

Today, the necessity of faster and smaller devices is pushing the electronic industry into developing electron devices with solid-state structures of few nanometers. In these dimensions electron dynamics are in general governed by quantum mechanical laws. We have recently shown that Bohmian trajectories allow a direct treatment of the many-particle interaction among electrons with an accuracy comparable to DFT techniques. In this article we present a general, versatile and time-dependent 3D quantum electron transport simulator, named BITLLES (Bohmian Interacting Transport in Electronic Structures), based on Bohmian trajectories for nanoelectronic devices. As a numerical example, we show the ability of BITLLES simulator to predict the electrical characteristics (DC, AC and fluctuations) of a Resonant Tunneling Diode.