Title :
Process technologies for the integration of high density phase change RAM
Author :
Jeong, G.T. ; Hwang, Y.N. ; Lee, S.-H. ; Lee, S.Y. ; Ryoo, K.C. ; Park, J.H. ; Song, Y.J. ; Ahn, S.J. ; Jeong, C.W. ; Kim, Y.T. ; Horii, H. ; Ha, Y.H. ; Koh, G.W. ; Jeong, H.S. ; Kinam Kim
Author_Institution :
Adv. Technol. Dev. Team, Samsung Electron. Co., Ltd., Gyeonggi-Do, South Korea
Abstract :
Phase change RAM (PRAM) is a promising memory that can solve the problems of conventional memory - scalability, write/read speed and reliability. The process technologies for the integration of high density PRAM are reviewed. The most important challenge of PRAM is the reduction of writing current. Various approaches to reduce the writing current are reviewed and other key factors for the high density PRAM are discussed.
Keywords :
phase change materials; random-access storage; PRAM; high density phase change RAM; memory reliability; memory scalability; process technologies; write/read speed; writing current reduction; Computer aided engineering; Costs; Flash memory; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory; Redundancy; Scalability; Writing;
Conference_Titel :
Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
Print_ISBN :
0-7803-9081-4
DOI :
10.1109/ICICDT.2005.1502579
